Power amplifiers testing system and related testing method

ABSTRACT

A testing system includes: a signal generator arranged to generate a testing signal; a dividing circuit coupled to the signal generator for providing a plurality of input signals according to the testing signal; and a plurality of power-amplifier chips coupled to the dividing circuit for being tested by generating a plurality of output signals for a predetermined testing time according to the plurality of input signals respectively.

BACKGROUND

A power amplifier is arranged to convert a low-power signal into alarger signal of significant power. The power amplifier may be used fordriving the antenna of a transmitter. High efficiency and high outputpower are two main features of the power amplifier. To validate thereliability of the power amplifier, a testing process may be performedupon the power amplifier when the power amplifier is manufactured.Therefore, providing a high throughput and accurate reliability testingmethod is highly desirable in this field.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a diagram illustrating a testing system accordance with someembodiments.

FIG. 2 is a diagram illustrating a power amplifier in accordance withsome embodiments.

FIG. 3 is a diagram illustrating a power amplifier with signal waveformsin accordance with some embodiments.

FIG. 4 is a diagram illustrating a power amplifier during a device-levelcharacterizing process in accordance with some embodiments.

FIG. 5A is a diagram illustrating output powers with respect to inputpowers of power amplifiers in accordance with some embodiments.

FIG. 5B is a diagram illustrating power added efficiencies with respectto input powers of power amplifiers in accordance with some embodiments.

FIG. 6A is a diagram illustrating ratios of output powers before RFreliability test to output powers after the RF reliability test inaccordance with some embodiments.

FIG. 6B is a diagram illustrating ratios of power added efficienciesbefore RF reliability test to power added efficiencies after the RFreliability test in accordance with some embodiments.

FIG. 7A is a diagram illustrating a common source testing result of acircuit stage before and after RF reliability test in accordance withsome embodiments.

FIG. 7B is a diagram illustrating a common gate testing result of acircuit stage before and after RF reliability test in accordance withsome embodiments.

FIG. 8 is a flowchart illustrating a testing method in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Embodiments of the present disclosure are discussed in detail below. Itshould be appreciated, however, that the present disclosure providesmany applicable inventive concepts that can be embodied in a widevariety of specific contexts. The specific embodiments discussed aremerely illustrative and do not limit the scope of the disclosure.

Further, spatially relative terms, such as “beneath,” “below,” “above,”“upper”, “lower”, “left”, “right” and the like, may be used herein forease of description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly. It will be understood that when an element is referred toas being “connected to” or “coupled to” another element, it may bedirectly connected to or coupled to the other element, or interveningelements may be present.

Notwithstanding that the numerical ranges and parameters setting forththe broad scope of the disclosure are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspossible. Any numerical value, however, inherently contains certainerrors necessarily resulting from the standard deviation found in therespective testing measurements. Also, as used herein, the term “about”generally means within 10%, 5%, 1%, or 0.5% of a given value or range.Alternatively, the term “about” means within an acceptable standarderror of the mean when considered by one of ordinary skill in the art.Other than in the operating/working examples, or unless otherwiseexpressly specified, all of the numerical ranges, amounts, values andpercentages such as those for quantities of materials, durations oftimes, temperatures, operating conditions, ratios of amounts, and thelikes thereof disclosed herein should be understood as modified in allinstances by the term “about.” Accordingly, unless indicated to thecontrary, the numerical parameters set forth in the present disclosureand attached claims are approximations that can vary as desired. At thevery least, each numerical parameter should at least be construed inlight of the number of reported significant digits and by applyingordinary rounding techniques. Ranges can be expressed herein as from oneendpoint to another endpoint or between two endpoints. All rangesdisclosed herein are inclusive of the endpoints, unless specifiedotherwise.

FIG. 1 is a diagram illustrating a testing system 100 accordance withsome embodiments. The testing system 100 is a multi-chip testing system.The testing system 100 comprises a plurality of power amplifiers102_1-102_N, a signal generator 104 and a dividing circuit 106. Thetesting system 100 is configured to test the radio frequency (RF)reliability of the power amplifiers 102_1-102_N. According to someembodiments, the plurality of power amplifiers 102_1-102_N are arrangedto be a plurality of power-amplifiers chips respectively. The pluralityof power amplifiers 102_1-102_N are implemented in multiple chipsrespectively, and the multiple chips may be on-wafer or discrete chips.The multiple chips may be tested simultaneously. Moreover, the poweramplifiers 102_1-102_N may be RF power amplifiers, and the testingsystem 100 is arranged to simultaneously perform RF stress upon thepower amplifiers 102_1-102_N. The testing system 100 may improve theefficiency or throughput of the RF reliability test of the poweramplifiers 102_1-102_N. To perform the RF reliability test, the outputpowers of the power amplifiers 102_1-102_N may be relatively large tovalidate the device reliability limitation. In some embodiments, severaldesign techniques are introduced for the power amplifiers 102_1-102_N togenerate the large powers. According to some embodiments, the RFreliability test of the power amplifiers 102_1-102_N may be performedunder relatively high temperature. For example, the RF reliability testof the power amplifiers 102_1-102_N may be performed in an oven suchthat the power amplifiers 102_1-102_N may be uniformly heated.

Moreover, to realize how the device (e.g. transistor) in the poweramplifier is impacted by the RF stress, in some embodiments, adevice-level characterizing process is introduced to characterize thedevice-level (e.g. transistor level) characteristics in each of thepower amplifiers 102_1-102_N after the RF stress.

To perform the multi-chip reliability test, the signal generator 104 incombination with the dividing circuit 106 are arranged to provide RFinput power to each of the power amplifiers 102_1-102_N during thereliability test. According to some embodiments, the signal generator104 is arranged to generate a testing signal St. The testing signal Stmay be a sinusoidal signal (or a modulated signal) with a predeterminedfrequency. According to some embodiments, the signal generator 104 maybe an oscillator, a phase-lock loop (PLL) circuit, or a frequencysynthesizer. The signal generator 104 may be an on-chip circuitintegrated with the power amplifiers 102_1-102_N, or an off-chip circuitexternally coupled to the power amplifiers 102_1-102_N.

The dividing circuit 106 is coupled to the signal generator 104 and thepower amplifiers 102_1-102_N, for providing a plurality of RF inputsignal Sri_1-Sri_N to the power amplifiers 102_1-102_N according to thetesting signal St respectively. According to some embodiments, the powerdivider 106 may be a power divider arranged to divide the power of thetesting signal St by N to generate the RF input signal Sri_1-Sri_N. Whenthe dividing circuit 106 is arranged to divide the power of the testingsignal St by N, the powers (or swings) of the RF input signalSri_1-Sri_N are the same. However, this is not a limitation of thepresent embodiments. In another embodiment, the dividing circuit 106 maygenerate the RF input signal Sri_1-Sri_N with different powers for thepower amplifiers 102_1-102_N respectively. Moreover, the dividingcircuit 106 may be implemented by passive module, which may beexternally coupled to the power amplifiers 102_1-102_N, or on-chip powerdivider, which is integrated with the power amplifiers 102_1-102_N.

According to some embodiments, the power amplifiers 102_1-102_N may be aplurality of on-wafer power amplifiers. The power amplifiers 102_1-102_Nmay be a plurality of individual power amplifiers in package style, inwhich the packaged power amplifiers are connected to the dividingcircuit 106 through the way of wire-bonds, flip-chip, or integratedFan-Out (InFO). The power amplifiers 102_1-102_N may be a plurality ofintegrated power amplifiers. The power amplifiers 102_1-102_N may beintegrated with the signal generator 104 and/or the dividing circuit106.

According to some embodiments, during the RF reliability test, the RFinput signal Sri_1-Sri_N may be inputted to the power amplifiers102_1-102_N at the same time. The power amplifiers 102_1-102_N maycontinuously generate a plurality of RF output signals Sro_1-Sro_N withhigh output powers (e.g. about 20 dBm) for a long time (e.g. a week)under a predetermined environment temperature (e.g. 85° C.) according tothe RF input signal Sri_1-Sri_N respectively. During the testing time,the devices (e.g. the transistors) in the power amplifiers 102_1-102_Nmay undergo RF stress caused by the RF signals transmitted through thepower amplifiers 102_1-102_N. It is noted that the signal powers of theRF input signal Sri_1-Sri_N (as well as the powers of the correspondingRF output signals Sro_1-Sro_N) may be similar with each other, differentfrom each other, partially similar with each other, or partiallydifferent from each other.

Moreover, to evaluate the impact of the power amplifiers 102_1-102_Nafter the RF stress process, the functions (e.g. output power and/orpower added efficiency) of the power amplifiers 102_1-102_N and thecurrent characteristic (e.g. the saturation currents of the transistors)of the power amplifiers 102_1-102_N may be measured before and after theRF stress process. By comparing the measured results of the poweramplifiers 102_1-102_N before and after the RF stress process, thereliability of the power amplifiers 102_1-102_N may be obtained.

FIG. 2 is a diagram illustrating a power amplifier 200 in accordancewith some embodiments. Each of the power amplifiers 102_1-102_N may havethe same configuration with the power amplifier 200. According to someembodiments, the power amplifier 200 is capable of generatingsufficiently high output power (e.g. 20 dBm) during the RF reliabilitytest. The power amplifier 200 comprises a first transforming circuit202, a gain stage 204, and a second transforming circuit 206.

The first transforming circuit 202 is arranged to receive an RF inputsignal Sri for generating a differential input signal Si. According tosome embodiments, the first transforming circuit 202 comprises a firstinductor 2022, a second inductor 2024, and a resistor 2026. The firstinductor 2022 and the second inductor 2024 may be the primary windingand the secondary winding respectively. The first inductor 2022 has afirst terminal coupled to the input signal Sri, and a second terminalcoupled to a reference voltage level, e.g. the ground voltage Vgnd. Thesecond inductor 2024 is magnetically coupled to the first inductor 2022.The second inductor 2024 has a first terminal and a second terminal foroutputting the differential input signal Si. The resistor 2026 has afirst terminal coupled to a predetermined position (e.g. a center) ofthe second inductor 2024, and a second terminal coupled to a firstreference voltage VG1. The first reference voltage VG1 may be the commonvoltage of the differential input signal Si.

The gain stage 204 is coupled to the first transforming circuit 202 forgenerating a differential output signal So according to the differentialinput signal Si. According to some embodiments, the gain stage 204comprises a first resistor 2042, a second resistor 2044, a plurality offirst circuit stages 2046_1-2046_m, a plurality of second circuit stages2048_1-2048_m, and a capacitor 2050. The first circuit stages2046_1-2046_m and the second circuit stages 2048_1-2048_m are configuredto be the differential circuit stages (i.e. differential pairs). Each ofthe first circuit stages 2046_1-2046_m comprises a first field-effecttransistor (FET) M1A and a second FET M2A. The FETs M1A and M2A areconfigured to be a cascoded gain stage, in which the FET M1A is acommon-source transistor, and the FET M2A is a common-gate transistor.Each of the second circuit stages 2048_1-2048_m comprises a first FETM1B and a second FET M2B. The FETs M1B and M2B are configured to be acascoded gain stage, in which the FET M1B is a common-source transistor,and the FET M2B is a common-gate transistor. It is noted that each ofthe FETs comprises two connecting terminals (e.g. drain and source) anda control terminal (e.g. gate). Moreover, to increase the output powerof the power amplifier 200 and to reduce the parasitic capacitances ofthe circuit stages 2046_1-2046_m and 2048_1-2048_m, the circuit stages2046_1-2046_m are connected in parallel, and the circuit stages2048_1-2048_m are connected in parallel. Therefore, the circuit stages2046_1-2046_m and 2048_1-2048_m are arranged to be a plurality ofslicing cascoded stages respectively. More specifically, the drains ofthe FETs M1A (or the sources of the FETs M2A) in the circuit stages2046_1-2046_m are physically separated from each other. The drains ofthe FETs M1B (or the sources of the FETs M2B) in the circuit stages2048_1-2048_m are physically separated from each other.

According to some embodiments, the first resistor 2042 has a firstterminal coupled to the first terminal of the second inductor 2024, anda second terminal coupled to the gates of the first FETs M1A of thefirst circuit stages 2046_1-2046_m. The sources of the first FETs M1A ofthe first circuit stages 2046_1-2046_m are coupled to the ground voltageVgnd. The drains of the first FETs M1A of the first circuit stages2046_1-2046_m are coupled to the sources of the second FETs M2A of thefirst circuit stages 2046_1-2046_m respectively. The gates of the secondFETs M2A of the first circuit stages 2046_1-2046_m are coupled to asecond reference voltage VG2. The drains of the second FETs M2A of thefirst circuit stages 2046_1-2046_m are coupled to a first input terminalof the second transforming circuit 206.

The second resistor 2044 has a first terminal coupled to the secondterminal of the second inductor 2024, and a second terminal coupled tothe gates of the first FETs M1B of the second circuit stages2048_1-2048_m. The sources of the first FETs M1B of the second circuitstages 2048_1-2048_m are coupled to the ground voltage Vgnd. The drainsof the first FETs M1B of the second circuit stages 2048_1-2048_m arecoupled to the sources of the second FETs M2B of the second circuitstages 2048_1-2048_m respectively. The gates of the second FETs M2B ofthe second circuit stages 2048_1-2048_m are coupled to the secondreference voltage VG2. The drains of the second FETs M2B of the secondcircuit stages 2048_1-2048_m are coupled to a second input terminal ofthe second transforming circuit 206.

Moreover, the capacitor 2050 has a first terminal coupled to the secondreference voltage VG2 and a second terminal coupled to the groundvoltage Vgnd.

According to some embodiments, the second reference voltage VG2 may beregarded as the differential virtual ground of the FETs M2A of the firstcircuit stages 2046_1-2046_m and the FETs M2B of the second circuitstages 2048_1-2048. Accordingly, the gates of the FETs M2A of the firstcircuit stages 2046_1-2046_m and the FETs M2B of the second circuitstages 2048_1-2048 may have better AC (Alternating Current) groundingperformance, and the output power of the power amplifier 200 may beincreased.

The second transforming circuit 206 is coupled to the gain stage 204 forreceiving the differential output signal So to generate an RF outputsignal Sro. According to some embodiments, the second transformingcircuit 206 comprises a first inductor 2062, a second inductor 2064, anda capacitor 2066. The first inductor 2062 and the second inductor 2064may be the primary winding and the secondary winding respectively. Thefirst terminal and the second terminal of the first inductor 2062 arearranged to receive the differential output signal So. Morespecifically, the first terminal of the first inductor 2062 is coupledto the drains of the second FETs M2A of the first circuit stages2046_1-2046_m. The second terminal of the first inductor 2062 is coupledto the drains of the second FETs M2B of the second circuit stages2048_1-2048_m. A predetermined position (e.g. a center) of the firstinductor 2062 is coupled to a reference voltage, e.g. the supply voltageVDD. The supply voltage VDD may be the common voltage of thedifferential output signal So. In addition, the second inductor 2064 hasa first terminal arranged to output the RF output signal Sro, and asecond terminal coupled to the ground voltage Vgnd.

According to some embodiments, the first inductor 2062 and the capacitor2066 are configured to be an LC (Inductor-Capacitor) resonator. The LCresonator may further increase the output power of the power amplifier200. Moreover, the first resistor 2042 and the second resistor 2044 maystabilize the power amplifier 200 when the power amplifier 200 outputsthe high output power during the RF reliability test. In other words,the oscillation of the power amplifier 200 may be avoided by using thefirst resistor 2042 and the second resistor 2044 during the RFreliability test.

In addition, the ratio of the turns of the first inductor 2022 to theturns of the second inductor 2024 is N1:1, and the ratio of the turns ofthe first inductor 2062 to the turns of the second inductor 2064 is1:N2, wherein N1 and N2 are greater than 1. The number N1 may be equalto the number N2. However, this is not a limitation of the presentembodiments. The number N1 may be different from the number N2.

When the ratio of the turns of the first inductor 2022 to the turns ofthe second inductor 2024 is N1:1 and the ratio of the turns of the firstinductor 2062 to the turns of the second inductor 2064 is 1:N2, thevoltage swings of the signals in the gain stage 204 may be reduced suchthat the reliability issue during the testing process may be alleviated.FIG. 3 is a diagram illustrating the input signal Sri, the differentialinput signal Si (i.e. Si+ and Si−), the differential output signal So(i.e. So+ and So−), the RF output signal Sro in the power amplifier 200in accordance with some embodiments. When the input signal Sri isinputted to the power amplifier 200 through the first transformingcircuit 202, the voltage swing of the input signal Sri may be reduced bythe first transforming circuit 202 due to the turns ratio (i.e. N1:1).When the voltage swing of the differential input signal Si is smallerthan the voltage swing of the input signal Sri, the RF stress of thedevices in the gain stage 204 during the testing process may be reduced,and the reliability issue of the devices (e.g. the FETs M1A, M1B, M2A,M2B) in the gain stage 204 may be alleviated during the testing process.

When the differential output signal So is outputted to the secondtransforming circuit 206, the voltage swing of the differential outputsignal So may be enlarged by the second transforming circuit 206 due tothe turns ratio (i.e. 1:N2). When the voltage swing of the RF outputsignal Sro is larger than the voltage swing of the differential outputsignal So, the output power of the power amplifier 200 may be increasedduring the testing process. In other words, the testing process of thepower amplifier 200 are performed under relatively large output powerwhile the devices (e.g. the FETs M1A, M1B, M2A, M2B) are still operatedunder reliable condition.

According to some embodiments, the input signal Sri may be continuouslyinputted to the power amplifier 200 for a relatively long testing time(e.g. a week) to test the RF reliability of the power amplifier 200.During the testing time, the devices (e.g. the FETs M1A, M1B, M2A, M2B)in the power amplifier 200 may undergo RF stress caused by the RFsignals transmitted to the second transforming circuit 206 from thefirst transforming circuit 202. After the RF stressing process, adevice-level characterizing process is performed upon the poweramplifier 200 to characterize the impact caused by the RF stress. FIG. 4is a diagram illustrating a power amplifier 400 during the device-levelcharacterizing process in accordance with some embodiments. For brevity,the numerals in the power amplifier 400 are similar to the numerals inthe power amplifier 200.

To evaluate the devices (e.g. transistors) in the power amplifier 400,the power amplifier 400 further comprises an output pad 402 and aconnecting path 404. The output pad 402 is coupled to the gain stage 204through the connecting path 404 for inputting or outputting a signalVd1. The signal Vd1 may be the drain current or the ground voltageduring the measuring process. More specifically, a first terminal of theconnecting path 404 is coupled to the gain stage 204 and a secondterminal of the connecting path 404 is coupled o the output pad 402. Toreduce the parasitic capacitance in the circuit stages 2046_1-2046_m and2048_1-2048_m, the output pad 402 is connected to one of the circuitstages 2046_1-2046_m and 2048_1-2048_m. However, this is not alimitation of the present embodiments. The power amplifier 200 maycomprises a plurality of output pads connecting to a plurality ofcircuit stages through at least one connecting path respectively. Theoutput pad 402 is electrically connected to the source of the FET M2B(or the drain of the FET M1B) of one of the circuit stages 2046_1-2046_mand 2048_1-2048_m. For brevity, in this embodiment, the output pad 402is electrically connected to the source of the FET M2B of the circuitstage 2048_m. The output pad 402 may be an external pad for receiving anexternal signal (e.g. current or voltage) from a testing device (notshown) and/or outputting a signal (e.g. current or voltage) to thetesting device.

According to some embodiments, the device-level characterizing processcomprises a first measuring process and a second measuring process.During the first measuring process, the FET M1B of the circuit stage2048_m is turned on and the FET M2B of the circuit stage 2048_m isturned off. More specifically, during the first measuring process, thegate and the drain of the FET M2B of the circuit stage 2048_m areconnected to the ground voltage Vgnd (i.e. VG2=Vgnd), and the gate ofthe FET M1B of the circuit stage 2048_m is connected to the firstreference voltage VG1. During the first measuring process, the FET M1Bof the circuit stage 2048_m may be characterized by using the firstreference voltage VG1 on the gate and the signal (e.g. the current) onthe drain of the FET M1B of the circuit stage 2048_m through the outputpad 402.

According to some embodiments, the variation of drain current (e.g. thesaturation current) of the FET M1B with respect to the first referencevoltage VG1 (i.e. the gate-source voltage drop) is measured during thefirst measuring process. The measured current variation may be comparedwith the original current variation before the RF reliability test toevaluate the impact of RF stress of the FET M1B in the power amplifier400. The original current variation of the FET M1B may be measuredbefore the RF reliability test by using the output pad 402. Since theother FETs M1B in the other circuit stages 2048_1-2048_(m−1) and2046_1-2046_m are similar to the FET M1B in the circuit state 2048_m,the impact of RF stress of the other FETs M1B in the other circuitstages 2048_1-2048_(m−1) and 2046_1-2046_m may similar to the impact ofRF stress of the FET M1B in the circuit state 2048_m. Therefore, whenthe measured current variation of the FET M1B in the circuit stage2048_m overlaps with or is close to the original current variation ofthe FET M1B in the circuit stage 2048_m, the FETs M1B in the circuitstages 2046_1-2046_m and 2048_1-2048_m may pass the RF reliability test.When the measured current variation of the FET M1B in the circuit stage2048_m deviates from the original current variation of the FET M1B inthe circuit stage 2048_m, the FETs M1B in the circuit stages2046_1-2046_m and 2048_1-2048_m may fail the RF reliability test.

During the second measuring process, the FET M1B of the circuit stage2048_m is turned off and the FET M2B of the circuit stage 2048_m isturned on. More specifically, during the second measuring process, thegate of the FET M1B of the circuit stage 2048_m is connected to theground voltage Vgnd (i.e. VG1=Vgnd), the source of the FET M2B of thecircuit stage 2048_m is connected to the ground voltage Vgnd (i.e. theoutput pad 402 is connected to the ground voltage Vgnd), and the gate ofthe FET M2B of the circuit stage 2048_m is connected to the secondreference voltage VG2. During the second measuring process, the FET M2Bof the circuit stage 2048_m may be characterized by using the secondreference voltage VG2 on the gate and the signal (e.g. the current) onthe source of the FET M2B of the circuit stage 2048_m through the outputpad 402.

According to some embodiments, the variation of drain current (e.g. thesaturation current) of the FET M2B with respect to the second referencevoltage VG2 (i.e. the gate-source voltage drop) is measured during thesecond measuring process. The measured current variation may be comparedwith the original current variation before the RF reliability test toevaluate the impact of RF stress of the FET M2B in the power amplifier400. The original current variation of the FET M2B may be measuredbefore the RF reliability test by using the output pad 402. Since theother FETs M2B in the other circuit stages 2048_1-2048_(m−1) and2046_1-2046_m are similar to the FET M2B in the circuit state 2048_m,the impact of RF stress of the other FETs M2B in the other circuitstages 2048_1-2048_(m−1) and 2046_1-2046_m may similar to the impact ofRF stress of the FET M2B in the circuit state 2048_m. Therefore, whenthe measured current variation of the FET M2B in the circuit stage2048_m overlaps with or is close to the original current variation ofthe FET M2B in the circuit stage 2048_m, the FETs M2B in the circuitstages 2046_1-2046_m and 2048_1-2048_m may pass the RF reliability test.When the measured current variation of the FET M2B in the circuit stage2048_m deviates from the original current variation of the FET M2B inthe circuit stage 2048_m, the FETs M2B in the circuit stages2046_1-2046_m and 2048_1-2048_m may fail the RF reliability test.

Accordingly, by performing the device-level characterizing process uponthe power amplifier 400 after the RF reliability test, the reliabilityof the transistors in the power amplifier 400 may be evaluated andvalidated.

FIG. 5A is a diagram illustrating output powers with respect to inputpowers of the power amplifiers 102_1-102_N in accordance with someembodiments. FIG. 5B is a diagram illustrating power added efficiencieswith respect to input powers of the power amplifiers 102_1-102_N inaccordance with some embodiments. For example, when the number of thepower amplifiers 102_1-102_N is 14 (i.e. N=14), the testing system 100performs the RF reliability test upon the power amplifiers 102_1-102_14for the predetermined testing time at the same time. When the process ofRF reliability test finish, the power amplifiers 102_1-102_14 arearranged to measure the output powers (i.e. Pout) with respect to inputpowers (i.e. Pin) respectively, and the added efficiencies (i.e. PAE)with respect to input powers (i.e. Pin) respectively. The plurality ofcurves (i.e. 502) in FIG. 5A represent the variations of the outputpowers with respect to input powers of the power amplifiers 102_1-102_14respectively. The plurality of curves (i.e. 504) in FIG. 5B representthe variations of the power added efficiencies with respect to inputpowers of the power amplifiers 102_1-102_14 respectively. According tosome embodiment, if the curve (output power curve or power addedefficiency curve) of an power amplifier deviates from other curves ofthe other power amplifiers, the power amplifier with the deviated curvemay fail the reliability test.

FIG. 6A is a diagram illustrating the ratio of the output power of eachpower amplifier before the RF reliability test to the output power ofthe power amplifier after the RF reliability test in accordance withsome embodiments. FIG. 6B is a diagram illustrating the ratio of thepower added efficiency of each power amplifier before the RF reliabilitytest to the power added efficiency of the power amplifier after the RFreliability test in accordance with some embodiments. In FIG. 6A, thecode names PCB01-PCB14 in x-axis represents the power amplifiers102_1-102_14 respectively, and y-axis is the value (i.e. APout Ratio) ofthe ratio of the output power before the RF reliability test to theoutput power after the RF reliability test. For example, the APout Ratioof the PCB04 is 602. In FIG. 6B, y-axis is the value (i.e. APAE Ratio)of the ratio of the power added efficiency before the RF reliabilitytest to the power added efficiency after the RF reliability test. Forexample, the APAE Ratio of the PCB04 is 606. According to someembodiment, the ratio (APout Ratio or APAE Ratio) of an power amplifierdeviates from other ratios of the other power amplifiers, the poweramplifier with the deviated ratio may fail the reliability test.

Please refer to FIG. 4 again. FIG. 7A is a diagram illustrating a commonsource testing result of a circuit stage (e.g. 2048_m) before and afterthe RF reliability test in accordance with some embodiments. FIG. 7B isa diagram illustrating a common gate testing result of a circuit stage(e.g. 2048_m) before and after the RF reliability test in accordancewith some embodiments. According to some embodiments, the common sourcetesting is performed upon the FET M1B, which is a common source FET, ofthe circuit stage 2048_m, and the common gate testing is performed uponthe FET M2B, which is a common gate FET, of the circuit stage 2048_m. InFIG. 7A, x-axis represents the variation of voltage drop VGS1 from thegate of the FET M1B to the source of the FET M1B, and y-axis representsthe variation of drain current IDS1 (e.g. the saturation current) of theFET M1B with respect to the voltage drop VGS1. In FIG. 7B, x-axisrepresents the variation of voltage drop VGS2 from the gate of the FETM2B to the source of the FET M2B, and y-axis represents the variation ofdrain current IDS2 (e.g. the saturation current) of the FET M2B withrespect to the voltage drop VGS2. According to some embodiments, whenthe variation of drain current (e.g. IDS1 or IDS2) of an FET (e.g. M1Bor M2B) before the RF reliability test is overlapped or closed to thevariation of drain current of the FET after the RF reliability test, theFET may pass the RF reliability test. When the variation of draincurrent (e.g. IDS1 or IDS2) of an FET (e.g. M1B or M2B) before the RFreliability test deviates from the variation of drain current of the FETafter the RF reliability test, the FET may fail the RF reliability test.For example, in FIG. 7A, the curve 702, i.e. the variation of draincurrent IDS1 of the FET M1B before the RF reliability test, issubstantially overlapped with the curve 704, i.e. the variation of draincurrent IDS1 of the FET M1B after the RF reliability test. Therefore,the FET M1B (as well as other FETs M1B in the power amplifier 200) maypass the RF reliability test. For another example, in FIG. 7B, the curve708, i.e. the variation of drain current IDS2 of the FET M2B after theRF reliability test, deviates from the curve 706, i.e. the variation ofdrain current IDS2 of the FET M2B before the RF reliability test.Therefore, the FET M2B (as well as other FETs M2B in the power amplifier200) may fail the RF reliability test. In this example, the degradationof the FET M2B may be caused by the hot-carrier injection (HCI) duringthe RF reliability test. The hot-carrier injection may shift (e.g.increase) the threshold voltage (i.e. Vth) of the FET M2B, andconsequently reduces the saturation current of the FET M2B.

According to some embodiments, the operation of the testing system 100may be summarized into the operations in FIG. 8. FIG. 8 is a flowchartillustrating a testing method 800 in accordance with some embodiments.The testing method 800 is designed for testing the reliability of aplurality of power amplifiers The power amplifiers may be the poweramplifiers 102_1-102_N. The method 800 comprises operations 802-808.

In operation 802, the power amplifiers 102_1-102_N are arranged tocouple to the signal generator 104. The power amplifiers 102_1-102_N areimplemented in multiple chips for being tested simultaneously.

In operation 804, the signal generator 104 is arranged to the testingsignal St. The testing signal St may be a sinusoidal signal (or amodulated signal) with a predetermined frequency.

In operation 806, the dividing circuit 106 is arranged to provide the RFinput signal Sri_1-Sri_N to the power amplifiers 102_1-102_N accordingto the testing signal St respectively. Then, the power amplifiers102_1-102_N are arranged to simultaneously generate the output signalsSro_1-Sro_N for a predetermined testing time according to the RF inputsignal Sri_1-Sri_N respectively to stress the devices in the poweramplifiers 102_1-102_N respectively.

In operation 808, the FET M1B of the circuit stage 2048_m is turned onand the FET M2B of the circuit stage 2048_m is turned off.

In operation 810, the first measuring process is performed upon the FETM1B of the circuit stage 2048_m for measuring the variation of draincurrent (e.g. the saturation current) of the FET M1B with respect to thefirst reference voltage VG1 (i.e. the gate-source voltage drop).

In operation 812, the FET M1B of the circuit stage 2048_m is turned offand the FET M2B of the circuit stage 2048_m is turned on.

In operation 814, the second measuring process is performed upon the FETM2B of the circuit stage 2048_m for measuring the variation of draincurrent (e.g. the saturation current) of the FET M2B with respect to thesecond reference voltage VG2 (i.e. the gate-source voltage drop).

In operation 816, the FIG. measured current variations of the FETs M1Band M2B are compared with the original current variations of the FETsM1B and M2B to evaluate the impact of RF stress of the FETs M1B and M2Bin the power amplifier 400 respectively.

Briefly, according to the present embodiments, the testing system 100 iscapable of performing RF reliability test upon a plurality of poweramplifiers operated under relatively high output powers. Moreover, afterthe RF stress, the device-level characterizing process is arranged tocharacterize the device-level (e.g. transistor level) characteristics ineach of the power amplifiers. Therefore, the throughput of the RFreliability test of the power amplifiers may be improved, and thetransistors impacted by the RF stress in the power amplifiers may beidentified.

According to some embodiments, a testing system is provided. The testingsystem comprises a signal generator, a dividing circuit, and a pluralityof power-amplifier chips. The signal generator is arranged to generate atesting signal. The dividing circuit is coupled to the signal generatorfor providing a plurality of input signals according to the testingsignal. The plurality of power-amplifier chips are coupled to thedividing circuit for being tested by generating a plurality of outputsignals for a predetermined testing time according to the plurality ofinput signals respectively.

According to some embodiments, a power amplifier is provided. The poweramplifier comprises a first transforming circuit, a plurality of firstcircuit stages, a plurality of second circuit stages, and a secondtransforming circuit. The first transforming circuit is arranged togenerate an non-inverting input signal and an inverting input signalaccording to an input signal. The plurality of first circuit stages arecoupled to the first transforming circuit for generating an invertingoutput signal according to the non-inverting input signal. The pluralityof second circuit stages are coupled to the first transforming circuitfor generating an non-inverting output signal according to the invertinginput signal. The second transforming circuit is coupled to theplurality of first circuit stages and the plurality of second circuitstages for generating an output signal according to the inverting outputsignal and the non-inverting output signal. The plurality of firstcircuit stages are connected in parallel, and the plurality of secondcircuit stages are connected in parallel.

According to some embodiments, a testing method is provided. The testingmethod comprises: arranging a signal generator to generate a testingsignal; arranging a dividing circuit to generate a plurality of inputsignals according to the testing signal; and testing a plurality ofpower-amplifier chips by arranging the plurality of power-amplifierchips to simultaneously generate a plurality of output signals for apredetermined testing time according to the plurality of input signalsrespectively.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A testing system, comprising: a signal generator,arranged to generate a testing signal; a dividing circuit coupled to thesignal generator and configured to receive the testing signal andprovide a plurality of input signals according to the testing signal;and a plurality of power-amplifier chips coupled to the dividingcircuit, each of the plurality of power-amplifier chips being configuredto be tested by receiving a respective input signal of the plurality ofinput signals and generating respective output signal for apredetermined testing time.
 2. The testing system of claim 1, whereinthe plurality of power-amplifier chips are arranged to simultaneouslygenerate the plurality of output signals for the predetermined testingtime according to the plurality of input signals respectively.
 3. Thetesting system of claim 1, wherein the plurality of input signals andthe plurality of output signals are radio frequency (RF) signals.
 4. Thetesting system of claim 1, wherein at least one of the plurality ofpower-amplifier chips comprises: a first transforming circuit, arrangedto generate a differential input signal according to an input signal ofthe plurality of input signals; a gain stage, coupled to the firsttransforming circuit, for generating a differential output signalaccording to the differential input signal; and a second transformingcircuit, coupled to the gain stage, for generating an output signal ofthe plurality of output signals according to the differential outputsignal.
 5. The testing system of claim 4, wherein the first transformingcircuit comprises: a first inductor, having a first terminal coupled tothe input signal and a second terminal coupled to a first referencevoltage level; a second inductor, magnetically coupled to the firstinductor, and having a first terminal and a second terminal forgenerating the differential input signal according to the input signal;and a resistor, having a first terminal coupled to a predeterminedposition of the second inductor and a second terminal coupled to asecond reference voltage level; wherein a first turns of the firstinductor is greater than a second turns of the second inductor.
 6. Thetesting system of claim 4, wherein the gain stage comprises: a firstresistor, having a first terminal for receiving an inverting inputsignal of the differential input signal; a plurality of first circuitstages, coupled to a second terminal of the first resistor, forgenerating an non-inverting output signal of the differential outputsignal according to the inverting input signal of the differential inputsignal; a second resistor, having a first terminal for receiving annon-inverting input signal of the differential input signal; and aplurality of second circuit stages, coupled to a second terminal of thesecond resistor, for generating an inverting output signal of thedifferential output signal according to the non-inverting input signalof the differential input signal.
 7. The testing system of claim 6,wherein at least one of the plurality of first circuit stages comprises:a first field-effect transistor (FET), having a first connectingterminal coupled to a first reference voltage, a control terminalcoupled to the second terminal of the first resistor; and a second FET,having a first connecting terminal coupled to a second connectingterminal of the first FET, a control terminal coupled to a secondreference voltage, and a second connecting terminal outputted thenon-inverting output signal of the differential output signal; and atleast one of the plurality of second circuit stages comprises: a thirdFET, having a first connecting terminal coupled to the first referencevoltage, a control terminal coupled to the second terminal of the secondresistor; and a fourth FET, having a first connecting terminal coupledto a second connecting terminal of the third FET, a control terminalcoupled to the second reference voltage, and a second connectingterminal outputted the inverting output signal of the differentialoutput signal.
 8. The testing system of claim 7, wherein the gain stagefurther comprises: a capacitor, having a first terminal coupled to thecontrol terminal of the second FET and the control terminal of thefourth FET, and a second terminal coupled to the first referencevoltage.
 9. The testing system of claim 7, wherein the gain stagefurther comprises: a connecting path, having a first terminal coupled tothe second connecting terminal of the third FET and the first connectingterminal of the fourth FET; and an output pad, coupled to a secondterminal of the connecting path, for receiving or outputting a signal.10. The testing system of claim 4, wherein the second transformingcircuit comprises: a first inductor, having a first terminal and secondterminal coupled to an non-inverting output signal and an invertingoutput signal of the differential output signal respectively; a secondinductor, magnetically coupled to the first inductor, and having a firstterminal outputted the output signal of the plurality of output signalsand a second terminal coupled to a first reference voltage; and acapacitor, having a first terminal and second terminal coupled to thefirst terminal and the second terminal of the first inductorrespectively; wherein a predetermined position of the first inductor iscoupled to a second reference voltage level, and a first turns of thefirst inductor is less than a second turns of the second inductor.
 11. Apower amplifier, comprising: a first transforming circuit, arranged togenerate a non-inverting input signal and an inverting input signalaccording to an input signal; a plurality of first circuit stages,coupled to the first transforming circuit, for generating an invertingoutput signal according to the non-inverting input signal; a pluralityof second circuit stages, coupled to the first transforming circuit, forgenerating an non-inverting output signal according to the invertinginput signal; and a second transforming circuit, coupled to theplurality of first circuit stages and the plurality of second circuitstages, for generating an output signal according to the invertingoutput signal and the non-inverting output signal; wherein the pluralityof first circuit stages are connected in parallel, and the plurality ofsecond circuit stages are connected in parallel.
 12. The power amplifierof claim 11, wherein the first transforming circuit comprises: a firstinductor, having a first terminal coupled to the input signal and asecond terminal coupled to a first reference voltage level; a secondinductor, magnetically coupled to the first inductor, and having a firstterminal and a second terminal for generating the non-inverting inputsignal and the inverting input signal according to the input signalrespectively; and a resistor, having a first terminal coupled to apredetermined position of the second inductor and a second terminalcoupled to a second reference voltage level; wherein a first turns ofthe first inductor is greater than a second turns of the secondinductor.
 13. The power amplifier of claim 11, further comprising: afirst resistor, having a first terminal for receiving the invertinginput signal and a second terminal coupled a plurality of first inputterminals of the plurality of first circuit stages respectively; and asecond resistor, having a first terminal for receiving the non-invertinginput signal and a second terminal coupled a plurality of second inputterminals of the plurality of second circuit stages respectively. 14.The power amplifier of claim 13, wherein the plurality of first circuitstages comprises: a first field-effect transistor (FET), having a firstconnecting terminal coupled to a first reference voltage, a controlterminal coupled to the second terminal of the first resistor; a secondFET, having a first connecting terminal coupled to a second connectingterminal of the first FET, a control terminal coupled to a secondreference voltage, and a second connecting terminal outputted thenon-inverting output signal; a third FET, having a first connectingterminal coupled to the first reference voltage, a control terminalcoupled to the second terminal of the first resistor; and a fourth FET,having a first connecting terminal coupled to a second connectingterminal of the third FET, a control terminal coupled to the secondreference voltage, and a second connecting terminal outputted thenon-inverting output signal; and the plurality of second circuit stagescomprises: a fifth FET, having a first connecting terminal coupled tothe first reference voltage, a control terminal coupled to the secondterminal of the second resistor; a sixth FET, having a first connectingterminal coupled to a second connecting terminal of the fifth FET, acontrol terminal coupled to the second reference voltage, and a secondconnecting terminal outputted the inverting output signal; a seventhFET, having a first connecting terminal coupled to the first referencevoltage, a control terminal coupled to the second terminal of the secondresistor; and an eighth FET, having a first connecting terminal coupledto a second connecting terminal of the seventh FET, a control terminalcoupled to the second reference voltage, and a second connectingterminal outputted the inverting output signal.
 15. The power amplifierof claim 14, further comprising: a capacitor, having a first terminalcoupled to the control terminal of the second FET, the control terminalof the fourth FET, the control terminal of the sixth FET, and thecontrol terminal of the eighth FET, and a second terminal coupled to thefirst reference voltage.
 16. The power amplifier of claim 14, furthercomprising: a connecting path, having a first terminal coupled to thesecond connecting terminal of the seventh FET and the first connectingterminal of the eighth FET; and an output pad, coupled to a secondterminal of the connecting path, for receiving or outputting a signal.17. The power amplifier of claim 11, wherein the second transformingcircuit comprises: a first inductor, having a first terminal and secondterminal coupled to the non-inverting output signal and the invertingoutput signal respectively; a second inductor, magnetically coupled tothe first inductor, and having a first terminal outputted the outputsignal and a second terminal coupled to a first reference voltage; and acapacitor, having a first terminal and second terminal coupled to thefirst terminal and the second terminal of the first inductorrespectively; wherein a predetermined position of the first inductor iscoupled to a second reference voltage level, and a first turns of thefirst inductor is less than a second turns of the second inductor.
 18. Atesting method, comprising: arranging a signal generator to generate atesting signal; arranging a dividing circuit to receive the testingsignal and generate a plurality of input signals according to thetesting signal; and testing a plurality of power-amplifier chips byarranging each of the plurality of power-amplifier chips to receive arespective input signal of the plurality of input signals and generate arespective output signal for a predetermined testing time.
 19. Thetesting method of claim 18, wherein for a power-amplifier chip of theplurality of power-amplifier chips, arranging the power-amplifier chipto receive the respective input signal and generate the respectiveoutput signal of the plurality of output signals for the predeterminedtesting time signals comprises: arranging a first transforming circuitto generate an non-inverting input signal and an inverting input signalaccording to the respective input signal; arranging a plurality of firstcircuit stages for generating an inverting output signal according tothe non-inverting input signal; arranging a plurality of second circuitstages for generating an non-inverting output signal according to theinverting input signal; and arranging a second transforming circuit forgenerating the respective output signal according to the invertingoutput signal and the non-inverting output signal.
 20. The testingmethod of claim 19, wherein one of the plurality of first circuit stagesand the plurality of second circuit stages is a cascoded circuit stagecomprising a first FET and a second FET, and the testing method furthercomprises: measuring a drain current of the first FET by turning on thefirst FET and turning off the second FET; and measuring a drain currentof the second FET by turning off the first FET and turning on the secondFET.